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Numéro de référence | NCE85H35TC | ||
Description | N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE85H35TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H35TC uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● VDSS =85V,ID =350A
RDS(ON) < 2.4mΩ @ VGS=10V (Typ:1.8 mΩ)
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ∆Vds TESTED!
Marking and pin assignment
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H35TC
NCE85H35TC
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
350
247
1280
460
3.07
3500
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE85H35TC ] |
No | Description détaillée | Fabricant |
NCE85H35TC | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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