MTB032P06AV8 Datasheet PDF - Cystech Electonics
| Part Number | MTB032P06AV8 | |
| Description | P-Channel Enhancement Mode MOSFET | |
| Manufacturers | Cystech Electonics | |
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There is a preview and MTB032P06AV8 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06AV8 BVDSS
ID@VGS=-10V, TC=25°C
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
Description
-60V
-25A
30mΩ(typ)
35mΩ(typ)
The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB032P06AV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTB032P06AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB032P06AV8
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Normalized Threshold Voltage vs Junction
Tempearture
1.4
ID=-250μA
1.2
1000
100
C oss
Crss
1
0.8
0.6
0.4
10
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=-5V
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
100
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-48V
8 ID=-6A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
1
TA=25°C, Tj=150°C
0.1 VGS=-10V, RθJA=50°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1 1
10
-VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs JunctionTemperature
8
7
6
5
4
3
2
1 TA=25°C, VGS=-10V, RθJA=50°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB032P06AV8
CYStek Product Specification
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MTB032P06AV8 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MTB032P06AV8.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| MTB032P06AV8 | The function is P-Channel Enhancement Mode MOSFET. Cystech Electonics | |
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