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PDF NGTB10N60FG Data sheet ( Hoja de datos )
| Número de pieza | NGTB10N60FG | |
| Descripción | N-Channel IGBT | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA2283A
NGTB10N60FG
N-Channel IGBT
600V, 10A, VCE(sat);1.5V, TO-220F-3FS
http://onsemi.com
Features
• IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V)
• IGBT IC=20A (Tc=25°C)
• Adaption of full isolation type package
• 5μs short circuit capability
• Diode VF=1.3V typ.(IF=10A)
• Diode trr=70ns typ.
• Enhansment type
Applications
• Power factor correction of white goods appliance
• General purpose inverter
Specifications
TO-220F-3FS
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
VCES
VGES
IC*1
Limited by Tjmax
@ Tc=25°C *2
@ Tc=100°C *2
600 V
±20 V
20 A
10 A
Collector Current (Pulse)
Diode Average Output Current
Allowable Power Dissipation
Junction Temperature
ICP Pulse width Limited by Tjmax
IO
PD Tc=25°C (Our ideal heat dissipation condition) *2
Tj
72 A
10 A
40 W
150 °C
Storage Temperature
Tstg
- 55 to +150
°C
Note : *1 Collector Current is calculated from the following formula.
Tjmax - Tc
*2
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Collector to Emitter Breakdown Voltage
V(BR)CES
IC=500μA, VGE=0V
Collector to Emitter Cut off Current
ICES
VCE=600V, VGE=0V
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
IGES
VGE(off)
VGE=±20V, VCE =0V
VCE =20V, IC=250μA
Collector to Emitter Saturation Voltage
VCE(sat)
VGE=15V, IC=10A
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VF
Cies
Coes
Cres
IF=10A
VCE =20V,f=1MHz
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Tc=25°C
Tc=125°C
Tc=25°C
Tc=125°C
min
600
4.5
Value
Unit
typ max
V
10 μA
1 mA
±100 nA
6.5 V
1.5 1.7 V
1.7 V
1.3 V
1440
pF
60 pF
30 pF
Continued on next page.
Semiconductor Components Industries, LLC, 2014
April, 2014
41814 TKIM TC-00003096/13014 TKIM No.A2283-1/6
1 page  
NGTB10N60FG
No.A2283-5/6
5 Page | ||
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