|
|
PDF NGTB30N60L2WG Data sheet ( Hoja de datos )
| Número de pieza | NGTB30N60L2WG | |
| Descripción | N-Channel IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NGTB30N60L2WG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Ordering number : ENA2308B
NGTB30N60L2WG
N-Channel IGBT
With Low VF Switching Diode
600V, 30A, VCE(sat);1.4V
http://onsemi.com
Features
• IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
• IGBT IC=100A (Tc=25°C)
• IGBT tf=80ns typ.
• Low switching loss in higher frequency applications
• Maximum junction temperature Tj=175°C
• Diode VF=1.7V typ. (IF=30A)
• Diode trr=70ns typ.
• 5μs short circuit capability
• Pb-free, Halogen-free and RoHS Compliance
Electrical Connection
C
G
N-channel
E
Applications
• Power factor correction of white goods appliance
Specifications
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25°C *2
@Tc=100°C *2
Pulsed collector current,
tp=100ms limited by Tjmax
@Tc=100°C *2
Pulsed collector current,
tp=1ms limited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25°C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICpulse
ICpeak
IO
PD
Tj
Tstg
Value
600
±20
100
30
60
Unit
V
V
A
A
A
232
30
225
175
−55 to +175
A
A
W
°C
°C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
G
C
E
Marking
TO−247
CASE 340AK
GTB30N
60L2 LOT No.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
Semiconductor Components Industries, LLC, 2014
August, 2014
80414TKIM TC-00003141/60314HK TC-00003126/31814TKIM No.A2308-1/8
1 page  
NGTB30N60L2WG
No.A2308-5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NGTB30N60L2WG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NGTB30N60L2WG | N-Channel IGBT | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |