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Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDD1600N10ALZ
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD1600N10ALZ fiche technique
FDD1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 6.8 A, 160 m
January 2014
Features
• RDS(on) = 124 m(Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 m(Typ.) @ VGS = 5 V, ID = 2.1 A
• Low Gate Charge (Typ.2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD1600N10ALZ
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
-55 to +150
300
FDD1600N10ALZ
8.4
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD1600N10ALZ Rev. C3
1
www.fairchildsemi.com

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