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PDF BFR750L3RH Data sheet ( Hoja de datos )
| Número de pieza | BFR750L3RH | |
| Descripción | Linear Low Noise SiGe:C Bipolar RF Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFR750L3RH (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Linear Low Noise SiGe:C Bipolar RF Transistor
• High gain ultra low noise RF transistor
• Based on Infineon's reliable high volume Silicon
Germanium technology
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P-1dB for driver stages
• High maximum stable and available gain
Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.32 mm max.
ideal for modules)
• Qualification report according to AEC-Q101 available
BFR750L3RH
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR750L3RH
Marking
Pin Configuration
R8 1=B 2=C 3=E
Package
TSLP-3-9
1 2013-09-09
1 page  
Transition frequency fT = ƒ(IC)
VCE = parameter, f = 1 GHz
BFR750L3RH
Power gain Gma, Gms = ƒ (f)
VCE = 3 V, IC = 60 mA
45
2V to 4V
40
35 1.00V
30
0.75V
25
20
15
10
5
0.50V
0
0 10 20 30 40 50 60 70 80
I [mA]
C
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V
f = parameter
28
26 0.90GHz
24
22
1.80GHz
20
2.40GHz
18
16 3.00GHz
14 4.00GHz
5.00GHz
12
6.00GHz
10
8
0 10 20 30 40 50 60 70 80
I [mA]
C
40
35
30
25
G
ms
20
15
|S |2
21
10
5
0
012345
f [GHz]
Power gain Gma, Gms = ƒ (VCE)
IC = 60 mA
f = parameter
6
27
0.90GHz
24
21 1.80GHz
2.40GHz
18
3.00GHz
15
4.00GHz
5.00GHz
12
6.00GHz
9
6
3
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V [V]
CE
5 2013-09-09
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFR750L3RH.PDF ] | |
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