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Numéro de référence | R6004KNJ | ||
Description | Nch 600V 4A Power MOSFET | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
R6004KNJ
Nch 600V 4A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.98Ω
±4.0A
58W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R6004KNJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±4.0 A
±12 A
Gate - Source voltage
Static
AC (f>1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 0.8 A
Avalanche energy, single pulse
EAS*3
46 mJ
Power dissipation (Tc = 25°C)
PD 58 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001
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Pages | Pages 13 | ||
Télécharger | [ R6004KNJ ] |
No | Description détaillée | Fabricant |
R6004KND | Nch 600V 4A Power MOSFET | ROHM Semiconductor |
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