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Datasheet H02N60S-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
H02 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H020HN01 | Color TFT LCD Module
H020HN01
Color TFT-LCD Module
(Mobile Phone Application)
n n n n
High color re-production High open ratio High resolution and contrast ratio With MRT (Micro-reflective Technology)
Official UK Representative
Unit A Merlin Centre, Gatehouse Close, Aylesbury, HP19 8DP, ENGLAND  AU lcd | | |
| 2 | H020HN03 | Color TFT LCD Module
Tentative
Color TFT-LCD Module
(Mobile Phone Application)
H020HN03
n n n n
Total solution for clam-shell phone Thinner and Lighter for dual solution Higher brightness, contrast High Color re-production
Official UK Representative
Unit A Merlin Centre, Gatehouse Close, Aylesb AU lcd | | |
| 3 | H02N60S | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capabilit  HI-SINCERITY transistor | | |
| 4 | H02N60SE | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capabilit HI-SINCERITY transistor | | |
| 5 | H02N60SF | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capabilit HI-SINCERITY transistor | | |
| 6 | H02N60SI | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capabilit HI-SINCERITY transistor | | |
| 7 | H02N60SJ | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capabilit HI-SINCERITY transistor | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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