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BTA25H-600CW3G fiches techniques PDF

ON Semiconductor - Triacs

Numéro de référence BTA25H-600CW3G
Description Triacs
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BTA25H-600CW3G fiche technique
BTA25H-600CW3G,
BTA25H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 Volts
On-State Current Rating of 25 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 500 V/ms minimum at 150°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package Internally Isolated
High Commutating dI/dt 4.0 A/ms minimum at 150°C
Internally Isolated (2500 VRMS)
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = 40 to 150°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA25H600CW3G
BTA25H800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
25
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
250 A
260 A2sec
NonRepetitive Surge Peak OffState
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDRM/VRRM
+100
V
Peak Gate Current (TJ = 150°C, t 20 ms) IGM 4.0 A
Average Gate Power (TJ = 150°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ 40 to +150 °C
Storage Temperature Range
Tstg 40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
25 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
TO220AB
CASE 221A
STYLE 12
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
HT
BTA25xCWG
AYWW
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA25H600CW3G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTA25H800CW3G TO220AB 50 Units / Rail
(PbFree)
*For additional information on our PbFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 0
1
Publication Order Number:
BTA25H600CW3/D

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