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IRF135B203 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF135B203
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF135B203 fiche technique
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
 
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
StrongIRFET™
IRF135B203
IRF135S203
HEXFET® Power MOSFET
D VDSS
135V
RDS(on) typ.
max
6.7m
8.4m
IS
D (Silicon Limited)
129A
GDS
TO-220AB
IRF135B203
D
S
G
D2-Pak
IRF135S203
G
Gate
D
Drain
S
Source
Base part number
IRF135B201
IRF135S201
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRF135B203
IRF135S203
28
26
24
22
20
18
16
14
12
10
8
6
4
2
ID = 77A
TJ = 125°C
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
140
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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June 17, 2015

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