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TGS - Silicon Planar pnpn Thyristor

Numéro de référence XL1225
Description Silicon Planar pnpn Thyristor
Fabricant TGS 
Logo TGS 





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XL1225 fiche technique
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
XL1225 Silicon Planar pnpn Thyristor
TO-92
FEATURES
Current-IGT:
120 µA
ITRMS:
0.6 A
VDRM:
400 V
1. CATHODE
2. GATE
3. ANODE
123
Operating and storage junction temperature range
TJ, Tstg : -55to +150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
On state voltage
VTM ITM=0.6A
1.7 V
Gate trigger voltage
VGTF
VAK=7V
0.8 V
Repetitive peak off-state voltage
VDRM
IDRM= 10µA
400
V
Holding current
IH IHL= 20mA , Av = 7 V
5 mA
A2 5 15 µA
A1 15 30 µA
Gate trigger current
A-1
IGTF
A-2
VAR=7V
30 45 µA
45 60 µA
A 60 80 µA
B 80 120 µA

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