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NXP Semiconductors - 3Q Hi-Com Triac

Numéro de référence BTA2008W-600D
Description 3Q Hi-Com Triac
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA2008W-600D fiche technique
BTA2008W-600D
3Q Hi-Com Triac
14 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable
plastic package. This "series D" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
and logic ICs including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tsp ≤ 111 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
- - 600 V
- - 9A
- - 0.8 A
0.25 -
5 mA
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