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Numéro de référence | 2N6901 | ||
Description | TRANSISTOR | ||
Fabricant | DSI | ||
Logo | |||
1 Page
Technical Data
TRANSISTOR
maximum ratings
VDS
VDG
VGS
ID
IDM
IG
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
100.0 V
100.0 V
± 10.0 V
1.69 A
5.0 A
empty
A
8.33 W
15.0 °C/W
150.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
2N6901
V-MOS
LOGIC LEVEL
N-CHANNEL
TO-39
empty
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVDSS
ID = 1 mA
100.0
-
V
2. VGS(TH)
ID = 1 mA
1.0 2.0
V
3. IDSS
VDS = 80 V
- 1.0 µA
4. IDSS
VDS = 80 V , TC = 125 °C
- 50.0 µA
5. IGSS
VGS = 10 V
-
100.0
nA
6. VDS(ON)
ID = 1.07 A , VGS = 5 V
(1) - 1.5 V
7. VDS(ON)
ID = 1.69 A , VGS = 5 V
(1) - 2.4 V
8. RDS(ON)
ID = 1.07 A , VGS = 5 V
(1) -
1.4 Ω
9. RDS(ON)
ID = 1.07 A , VGS = 5 V , TC = 125 °C
(1) -
2.6 Ω
10. Ciss
VDS = 25 V , VGS = 0 V
-
200.0
pF
11. Coss
VDS = 25 V , VGS = 0 V
- 80.0 pF
12. Crss
VDS = 25 V , VGS = 0 V
- 20.0 pF
13. td(ON)
ID = 1.07 A , VDD = 50 V
- 25.0 ns
14. tr
ID = 1.07 A , VDD = 50 V
- 45.0 ns
15. td(OFF)
ID = 1.07 A , VDD = 50 V
- 45.0 ns
16. tf
ID = 1.07 A , VDD = 50 V
- 80.0 ns
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 2N6901
Customer GENERAL PURPOSE
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Pages | Pages 1 | ||
Télécharger | [ 2N6901 ] |
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