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PDF BLM3050K Data sheet ( Hoja de datos )
| Número de pieza | BLM3050K | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | BELLING | |
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Pb Free Product
BLM3050K
N-Channel Enhancement Mode Power MOSFET
Description
The BLM3050K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =50A
RDS(ON) < 11mΩ @ VGS=10V
RDS(ON) < 16mΩ @ VGS=5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3050K
BLM3050K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
30
±20
50
35
140
60
0.4
70
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Page1
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Pb Free Product
BLM3050K
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Page5
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BLM3050K.PDF ] | |
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