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Numéro de référence | BLM3404 | ||
Description | N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | BELLING | ||
Logo | |||
Pb Free Product
BLM3404
N-Channel Enhancement Mode Power MOSFET
Description
The BLM3404 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
D
G
Genera Features
● VDS = 30V,ID = 5.8A
RDS(ON) < 31mΩ @ VGS=10V
RDS(ON) < 43mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Load switch
●PWM application
S
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3404
BLM3404
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±20
5.8
20
1.4
-55 To 150
89
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Min Typ Max Unit
30 33
--
-
1
V
μA
Page1
www.belling.com.cn
V2.0
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Pages | Pages 6 | ||
Télécharger | [ BLM3404 ] |
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