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PDF SQ1539EH Data sheet ( Hoja de datos )

Número de pieza SQ1539EH
Descripción P- & N-Channel MOSFET
Fabricantes Vishay　
Logotipo Vishay Logotipo



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No Preview Available ! SQ1539EH Hoja de datos, Descripción, Manual

www.vishay.com
SQ1539EH
Vishay Siliconix
N-and P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) (Ω) at VGS = ± 10 V
RDS(on) (Ω) at VGS = ± 4.5 V
ID (A)
30
0.280
0.380
0.85
-30
0.940
1.800
-0.85
Configuration
N & P Pair
Package
SC-70
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 S2
G2
G1
Marking Code: 9R
1
S1
Top View
2
G1
3
D2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current c
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
30 -30
± 20
0.85 -0.85
0.85 -0.56
0.85 -0.85
3.3 -3.3
3.5 -1.9
0.6 0.2
1.5 1.5
0.5 0.5
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
PCB Mount b
SYMBOL
RthJA
RthJF
N-CHANNEL
220
100
P-CHANNEL
220
100
UNIT
°C/W
S15-1925-Rev. A, 17-Aug-15
1
Document Number: 62993
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




SQ1539EH pdf
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 1.0
SQ1539EH
Vishay Siliconix
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.5
0.2
- 0.1
ID = 5 mA
0.8
0.6
TJ = 150 °C
0.4
0.2
TJ = 25 °C
0.0
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
40
ID = 1 mA
38
36
- 0.4
- 0.7
ID = 250 μA
34
32
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
30
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
10
IDM Limited
Limited by RDS(on)*
1
100 μs
1 ms
ID Limited
0.1
10 ms
100 ms, 1s, 10 s, DC
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
S15-1925-Rev. A, 17-Aug-15
5
Document Number: 62993
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5 Page





SQ1539EH arduino
SCĆ70: 6ĆLEADS
654
123
eb
e1
D
E1 E
-B-
-A-
A2 A
A1
Package Information
Vishay Siliconix
c
L
MILLIMETERS
Dim Min Nom Max
A 0.90 – 1.10
A1 –
– 0.10
A2 0.80 – 1.00
b 0.15 – 0.30
c 0.10 – 0.25
D 1.80 2.00 2.20
E 1.80 2.10 2.40
E1 1.15 1.25 1.35
e 0.65BSC
e1 1.20 1.30 1.40
L 0.10 0.20 0.30
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
INCHES
Min Nom Max
0.035 – 0.043
– – 0.004
0.031 – 0.039
0.006 – 0.012
0.004 – 0.010
0.071 0.079 0.087
0.071 0.083 0.094
0.045 0.049 0.053
0.026BSC
0.047 0.051 0.055
0.004 0.008 0.012
7_Nom
Document Number: 71154
06-Jul-01
www.vishay.com
1

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