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Numéro de référence | SQ2325ES | ||
Description | Automotive P-Channel MOSFET | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
www.vishay.com
SQ2325ES
Vishay Siliconix
Automotive P-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
ID (A)
Configuration
SOT-23 (TO-236)
D
3
1
G
Top View
Marking Code: 8Rxxx
2
S
-150
1.77
-0.84
Single
S
G
D
P-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2325ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-150
± 20
-0.84
-0.48
-3.7
-2
4.8
1.12
3
1
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-0188-Rev. B, 16-Feb-15
1
Document Number: 67847
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Pages | Pages 11 | ||
Télécharger | [ SQ2325ES ] |
No | Description détaillée | Fabricant |
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