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Vishay - Automotive N-Channel MOSFET

Numéro de référence SQ2398ES
Description Automotive N-Channel MOSFET
Fabricant Vishay 
Logo Vishay 





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SQ2398ES fiche technique
www.vishay.com
SQ2398ES
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
SOT-23 (TO-236)
D
3
1
G
Top View
Marking Code: 9E
2
S
100
0.300
1.67
Single
SOT-23
D
G
S
N-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
1.6
0.9
2.5
6.6
5
1.2
2
0.6
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
130
75
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1777-Rev. A, 30-Jul-15
1
Document Number: 67117
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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