|
|
PDF SQ4182EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4182EY | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SQ4182EY (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.vishay.com
SQ4182EY
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
SO-8 Single
D
D5
D6
D7
8
30
0.0038
0.0050
32
Single
SO-8
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
G
4
3G
2S
1S
S
Top View
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
TC = 25 °C a
TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 20
32
18
6.4
100
60
180
7.1
2.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
80
21
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2402--Rev. C, 12-Oct-15
1
Document Number: 67917
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
100 μs
10
1 ms
1 Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms
1s
10 s, DC
0.01
0.01 0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
SQ4182EY
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0001
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2402--Rev. C, 12-Oct-15
5
Document Number: 67917
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SQ4182EY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SQ4182EY | Automotive N-Channel MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |