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Datasheet KMB22F-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
KMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KMB010P30QA | P-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance.  KEC mosfet | | |
| 2 | KMB012N30QA | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
FEATURES VDSS=30V, ID=12A. Drain to KEC mosfet | | |
| 3 | KMB014P30QA | Trench MOSFET
SEMICONDUCTOR
TECHNICAL DATA
KMB014P30QA
P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for port KEC mosfet | | |
| 4 | KMB030N30D | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB030N30D
N-Ch Trench MOSFET
General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.
FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON) KEC mosfet | | |
| 5 | KMB035N40DB | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FE KEC mosfet | | |
| 6 | KMB035N40DC | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=35A. Low Drai KEC mosfet | | |
| 7 | KMB050N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on KEC transistor | |
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