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STMicroelectronics - N-Channel Enhancement Mode MOSFET

Numéro de référence 9NK60Z
Description N-Channel Enhancement Mode MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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9NK60Z fiche technique
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™
Power MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet production data
Features
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
VDS RDS(on) max ID PTOT
600
V
125 W
0.95 Ω 7 A
30 W
Extremely high dv/dt capability
Improved ESD capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Applications
Switching applications
Figure 1. Internal schematic diagram
, TAB
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
SC15010
Table 1. Device summary
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
Marking
B9NK60Z
P9NK60Z
P9NK60ZFP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 8799 Rev 3
1/19
www.st.com
19

PagesPages 19
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