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HY1001M fiches techniques PDF

HOOYI - N-Channel Enhancement Mode MOSFET

Numéro de référence HY1001M
Description N-Channel Enhancement Mode MOSFET
Fabricant HOOYI 
Logo HOOYI 





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HY1001M fiche technique
HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
70V/75A,
RDS(ON)=7.8m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management for Inverter Systems.
S
D
G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com

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