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Numéro de référence | EA20QS10 | ||
Description | SBD | ||
Fabricant | Nihon Inter Electronics | ||
Logo | |||
1.7A Avg. 100 Volts SBD
EA20QS10
10
5
2
1
0.5
0.2
0.1
0
FORWARD CURRENT VS. VOLTAGE
EA20QS10/EA20QS10-F
Tj=25°C
Tj=150°C
0° 180°
θ
CONDUCTION ANGLE
2.0
1.6
1.2
0.8
AVERAGE FORWARD POWER DISSIPATION
EA20QS10/EA20QS10-F
D.C.
RECT 180°
HALF SINE WAVE
RECT 120°
RECT 60°
0.4
0.2 0.4 0.6 0.8 1.0
INSTANTANEOUS FORWARD VOLTAGE (V)
1.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
10
Tj= 150 °C
EA20QS10/EA20QS10-F
5
2
0 20 40 60 80 100 120
PEAK REVERSE VOLTAGE (V)
0.8
0.6
0.4
0.2
0
0
AVERAGE REVERSE POWER DISSIPATION
EA20QS10/EA20QS10-F
D.C.
RECT 300°
RECT 240°
RECT 180°
HALF SINE WAVE
20 40 60 80 100 120
REVERSE VOLTAGE (V)
0° 180°
θ
CONDUCTION ANGLE
3.0
D.C.
2.5
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V RM= 100V
EA20QS10/EA20QS10-F
2.0 RECT 180°
HALF SINE WAVE
RECT 120°
1.5
RECT 60°
1.0
0.5
0
0 25 50 75 100 125 150
CASE TEMPERATURE ( °C)
0° 180°
θ
CONDUCTION ANGLE
3.0
D.C.
2.5
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
P.C. Board mounted (Print land=20 20mm)
EA20QS10/EA20QS10-F
2.0 RECT 180°
HALF SINE WAVE.
RECT 120°
1.5
RECT 60°
1.0
0.5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE ( °C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
EA20QS10/EA20QS10-F
40
30
20
10
0
0.02
0.02s
0.05
I FSM
0.1 0.2
TIME (s)
0.5 1
2
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S,f= 100 kHz ,Ty pica l V alue
200 EA20QS10/EA20QS10-F
100
50
20
10
0.5
1
2
5 10 20
REVERSE VOLTAGE (V)
50 100 200
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Pages | Pages 1 | ||
Télécharger | [ EA20QS10 ] |
No | Description détaillée | Fabricant |
EA20QS10 | SBD | Nihon Inter Electronics |
EA20QS10-F | SBD | Nihon Inter Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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