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PDF NKFD200-40 Data sheet ( Hoja de datos )

Número de pieza NKFD200-40
Descripción Ultrafast Soft Recovery Diode Module
Fabricantes nELL 
Logotipo nELL Logotipo



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No Preview Available ! NKFD200-40 Hoja de datos, Descripción, Manual

SEMICONDUCTOR
NKFD200-40 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode Module, 200 A
FEATURES
Very low Qrr and trr
Lead (Pb)-free
Designed and qualified for industrial level
Reduced RFI and EMI
Reduced snubbing
DESCRIPTION
FRED diodes are optimized to reduce
losses and EMI/RFI in high frequency
power conditioning systems. An
extensive characterization of the
recovery behavior for different values
of current, temperature and dl/dt
simplifies the calculations of losses in
the operating conditions. The softness
of the recovery eliminates the need for
a snubber in most applications.
TYPICAL APPLICATIONS
Power converters
Motor drives
Welders
Switching power supplies
TO-244 (non-insulated)
TO-244 (insulated)
Lug Lug
terminal terminal
anode 1 anode 2
Lug terminal
common cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
Base
common cathode
*Add suffix R for common anode
PRODUCT SUMMARY
IF(AV)
200A
VR 400V
IF(DC) at TC
160A at 100 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Average forward current
DC forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF(AV)
IF(DC)
lFSM
TEST CONDITIONS
TC =25°C, per leg
per device
TC =120°C
per leg
TC =100°C
Limited by junction temperature,
per leg
EAS
PD
TJ, TStg
L = 100 μΗ, duty cycle limited by
maximum TJ
TC =25°C
TC =100°C
MAX.
400
315
200
100
160
1400
UNIT
V
A
1.4
394
192
- 55 to 150
mJ
W
°C
www.nellsemi.com
Page 1 of 7

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NKFD200-40 pdf
SEMICONDUCTOR
1
NKFD200-40 Series RRooHHSS
Nell High Power Products
Fig.9-2 Maximum thermal impedance Rth(j-c) characteristics
(per leg, for TO-244 insulated)
0.1
0.01
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.00001
0.0001
0.001
0.01
0.1
Rectangular pulse duration, t1 (s)
Fig.10 Reverse recovery parameter test circuit
VR=200V
L=70µH
0.01Ω
dlF/dt
adjust
G
D.U.T.
D
IRFP250
S
1
10
www.nellsemi.com
Fig.11 Reverse recovery waveform and definitions
IF
0
(3)
trr
ta
tb
(1) dlF/dt
(2) lRRM
(4)
Qrr
0.5 lRRM
dl(rec)M/dt (5)
0.75 lRRM
(1) dlF/dt - rate of change of current
through zero crossing
(2) lRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going lF to point where a line passing
through 0.75 lRRM and 0.50 lRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and lRRM
Qrr =
trr xlRRM
2
(5) dl(rec)M/dt - peak rate of change of
current during tb portion of trr
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