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PDF BLP25M710 Data sheet ( Hoja de datos )
| Número de pieza | BLP25M710 | |
| Descripción | Broadband LDMOS driver transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLP25M710
Broadband LDMOS driver transistor
Rev. 1 — 29 August 2013
Product data sheet
1. Product profile
1.1 General description
A 10 W LDMOS power transistor for broadcast and industrial applications in the
HF to 2500 MHz band.
Table 1. Application information
Test signal
f
(MHz)
IDq
(mA)
VDS PL
Gp
(V) (W) (dB)
DVB-T
858 110 28 1 20.9
Pulsed RF [3] 2450
80
28 10 16.2
D
(%)
17.1
64.5
IMDshldr
(dBc)
47.5 [1]
-
PAR
(dB)
9.5 [2]
-
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
[3] Measured at = 10 %, tp = 12 s.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLP25M710
Broadband LDMOS driver transistor
9. Package outline
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BLP25M710
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 August 2013
VRW BSR
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© NXP B.V. 2013. All rights reserved.
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