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Datasheet BLP8G10S-45P-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
BLP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BLP0240 | Si PIN junction photodiode
BLP0240
PIN 结 Si 光电二极管 描述
工作在低频区域的 Si 光电二极管, 可探测波长处于峰值波长附近的光信号。
应用 • 遥控电路
• 光纤通信
结构
芯片结构:平面 PIN 型结构 电极:顶部 AlSi
外形图和尺寸
Anode C SHANGHAI BELLING diode | | |
2 | BLP1010 | PN junction Si photocell
BLP1010
PN 结 Si 光电池 描述
工作在低频区域的 Si 光电池,可接收波长处于峰值波长附近的光信号。
应用 • 遥控电路
• 光纤通信
结构
芯片结构:平面 PN 型结构 电极:顶部 AlSi
外形图和尺寸
Anode P
芯片尺寸� SHANGHAI BELLING data | | |
3 | BLP10H603 | Broadband LDMOS driver transistor BLP10H603
Broadband LDMOS driver transistor
Rev. 1 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 2.5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
Table 1. Application performance
Test sig NXP Semiconductors transistor | | |
4 | BLP10H605 | Broadband LDMOS driver transistor BLP10H605
Broadband LDMOS driver transistor
Rev. 3 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signa NXP Semiconductors transistor | | |
5 | BLP10H610 | Broadband LDMOS driver transistor BLP10H610
Broadband LDMOS driver transistor
Rev. 3 — 25 September 2014
Product data sheet
1. Product profile
1.1 General description
A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
Table 1. Application performance
Test s NXP Semiconductors transistor | | |
6 | BLP1208 | PN junction Si photocell
BLP1208
PN 结 Si 光电池 描述
工作在低频区域的 Si 光电池,可接收波长处于峰值波长附近的光信号。
应用 • 遥控电路
• 光纤通信
结构
芯片结构:平面 PN 型结构 电极:顶部 AlSi
外形图和尺寸
Anode
P
芯片尺寸� SHANGHAI BELLING data | | |
7 | BLP15M7160P | Power LDMOS transistor BLP15M7160P
Power LDMOS transistor
Rev. 3 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent rugg NXP Semiconductors transistor | |
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