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PDF BLP8G27-10 Data sheet ( Hoja de datos )
| Número de pieza | BLP8G27-10 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
Pulsed CW
2700 110 28 33
17 19 -
2-carrier W-CDMA [1]
2700 110 28 33
17 22 47.3
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX
1 page  
NXP Semiconductors
BLP8G27-10
Power LDMOS transistor
7.2 Graphical data
7.2.1 Pulsed CW
*S
G%
*S
Ș'
DDD
Ș'
*S
G%
*S
Ș'
DDD
Ș'
3/ :
3/ :
VDS = 28 V; IDq = 110 mA; Tcase = 25 C; = 10 %;
tp = 100 s.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 2. Power gain and drain efficiency as function of
output power; typical values
VDS = 28 V; Tcase = 25 C; f = 2600 MHz; = 10 %;
tp = 100 s.
(1) IDq = 90 mA
(2) IDq = 110 mA
(3) IDq = 130 mA
Fig 3. Power gain and drain efficiency as function of
output power; typical values
*S
G%
*S
DDD
Ș'
Ș'
3/ :
VDS = 28 V; IDq = 110 mA; f = 2600 MHz; = 10 %; tp = 100 s.
(1) Tcase = 37 C
(2) Tcase = +25 C
(3) Tcase = +85 C
Fig 4. Power gain and drain efficiency as function of output power; typical values
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLP8G27-10
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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