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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLS7G2325L-105
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLS7G2325L-105 fiche technique
BLS7G2325L-105
Power LDMOS transistor
Rev. 2 — 19 July 2011
Product data sheet
1. Product profile
1.1 General description
105 W LDMOS power transistor for S-band radar applications at frequencies from
2300 MHz to 2500 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS
PL(AV)
Gp
D
(MHz)
(mA) (V)
(W)
(dB) (%)
Pulse CW
2300 to 2500 900 30 110
16.5 55
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz
frequency range

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