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PDF BLS7G2730L-200P Data sheet ( Hoja de datos )
| Número de pieza | BLS7G2730L-200P | |
| Descripción | LDMOS S-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
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BLS7G2730L-200P;
BLS7G2730LS-200P
LDMOS S-band radar power transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
2700 MHz to 3000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C.
Test signal
f
VDS
(GHz)
(V)
Class-AB production test circuit
pulsed RF [1]
2.7 to 3.0
32
Application circuit
pulsed RF [2]
2.7 to 3.0
32
pulsed RF [3]
2.9 to 3.1
32
[1] tp = 300 s; = 10 %; IDq = 100 mA
[2] tp = 3000 s; = 20 %; IDq = 50 mA
[3] tp = 500 s; = 20 %; IDq = 50 mA
PL Gp
(W) (dB)
200 12
220 12.5
220 12.5
D tr
(%) (ns)
48 8
50 20
50 20
tf
(ns)
5
6
6
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2700 MHz to 3000 MHz
1 page  
NXP Semiconductors
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
Table 9. List of components test circuit
See Figure 2.
Component
Description
C1, C3, C6, C9, C13, C15 multilayer ceramic chip capacitor
C2, C5, C10, C16
multilayer ceramic chip capacitor
C4, C7, C8, C14
multilayer ceramic chip capacitor
C11, C17
multilayer ceramic chip capacitor
C12 electrolytic capacitor
R1, R2
chip resistor
Value
18 pF
1 F
12 pF
10 F
2200 F, 63 V
9.1
Remarks
[1] ATC600F
[2]
[1] ATC600F
[2]
[3]
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
7.4 Application circuit
PP
PP
&
&
& &
PP
&
5
5 &
BLS7G2730L-200P_LS-200P
Product data sheet
&
&
&
&
Fig 3.
DDD
Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm.
See Table 10 for a list of components.
Component layout for a class-AB application circuit
Table 10. List of components application circuit
See Figure 2.
Component
Description
C1, C3, C5, C6, C7, C8
multilayer ceramic chip capacitor
C2, C4
multilayer ceramic chip capacitor
C9, C10
electrolytic capacitor
R1, R2
chip resistor
Value
12 pF
1 F
2200 F, 50 V
50
Remarks
[1] ATC600F
[2]
[3]
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1 D
U1
H1
12
w2 D
c
H U2
L
34
b
e
w3
E1 E
Q
Dimensions
0 5 10 mm
scale
Unit(1) A b c D D1 E E1 e F H H1 L Q U1 U2 w2 w3
max 4.7
mm nom
min 4.2
11.81 0.18 31.55 31.52 9.5
11.56 0.10 30.94 30.96 9.3
9.53 1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.25
9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.54
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
0.25
0.01
sot539b_po
Outline
version
References
IEC
JEDEC
JEITA
SOT539B
European
projection
Issue date
12-05-02
13-05-24
Fig 15. Package outline SOT539B
BLS7G2730L-200P_LS-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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