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PDF BLS7G2933S-150 Data sheet ( Hoja de datos )
| Número de pieza | BLS7G2933S-150 | |
| Descripción | LDMOS S-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
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BLS7G2933S-150
LDMOS S-band radar power transistor
Rev. 2 — 23 February 2011
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.9 to 3.3 32 150
13.5 47
20
6
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
Output power = 150 W
Power gain = 13.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
1 page  
NXP Semiconductors
7.2 Graphs
200
PL
(W)
160
120
80
001aan028
(5)
(4)
(3)
(2)
(1)
40
0
0 4 8 12
Pi (W)
VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %.
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
Fig 2. Load power as a function of input power;
typical values
BLS7G2933S-150
LDMOS S-band radar power transistor
17
Gp
(dB)
15
13
11
001aan029
(1)
(2)
(3)
(4)
(5)
9
7
0 40 80 120 160 200
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %.
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
Fig 3. Power gain as a function of load power; typical
values
BLS7G2933S-150
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLS7G2933S-150
LDMOS S-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLS7G2933S-150
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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