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BLS7G3135L-350P fiches techniques PDF

NXP Semiconductors - LDMOS S-band radar power transistor

Numéro de référence BLS7G3135L-350P
Description LDMOS S-band radar power transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLS7G3135L-350P fiche technique
BLS7G3135L-350P;
BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 3 — 29 October 2013
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal
f
(GHz)
VDS
PL
Gp
D
(V)
(W) (dB)
(%)
tr tf
(ns) (ns)
pulsed RF
3.1
32 350 12 43 5
5
3.3
32 350 12 43 5
5
3.5
32 350 10 39 5
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range

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