BLS8G2731L-400P Datasheet PDF - NXP Semiconductors
| Part Number | BLS8G2731L-400P | |
| Description | LDMOS S-band radar power transistor | |
| Manufacturers | NXP Semiconductors | |
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BLS8G2731L-400P;
BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 1 — 26 May 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.1 GHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test
circuit.
Test signal
f
(GHz)
VDS
(V)
PL(1dB)
(W)
Gp [1]
(dB)
D [1]
(%)
PL(2dB)
(W)
Gp [2]
(dB)
D [2]
(%)
pulsed RF 2.7 to 2.9 32 540 11 45 610 10 46
2.9 to 3.1 32 490 12 47 550 11 49
2.7 to 3.1 32 530 12 45 590 11 47
[1] at 1 dB gain compression.
[2] at 2 dB gain compression.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
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NXP Semiconductors
7.3 Test circuit
PP
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
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Fig 2.
Printed-Circuit Board (PCB): Rogers RO3003; thickness = 0.508 mm.
See Table 9 for a list of components.
Component layout for class-AB production test circuit
&
DDD
Table 9. List of components
For test circuit see Figure 2.
Component
Description
Value
C1, C2
multilayer ceramic chip capacitor 5.6 pF
C3, C10
multilayer ceramic chip capacitor 220 pF, 50 V
C4, C9
multilayer ceramic chip capacitor 10 nF, 50 V
C5, C8
multilayer ceramic chip capacitor 100 nF, 50 V
C6, C7
multilayer ceramic chip capacitor 10 F, 10 V
C11, C12
multilayer ceramic chip capacitor 15 pF
C13, C14, C18, C19, C25, C26 multilayer ceramic chip capacitor 22 pF
C15, C20
electrolytic capacitor
560 pF
C16, C21
multilayer ceramic chip capacitor 0.01 F, 250 V
C17,C22
multilayer ceramic chip capacitor 0.1 F, 250 V
C23, C24
electrolytic capacitor
470 F, 63 V
R1, R9
resistor
50
R2, R3
shunt resistor
9.1
R4, R6
shunt resistor
5.1
R5
shunt resistor
510
R7, R8
resistor
0.01
Remarks
ATC: ATC600F5R6
Murata: GRM2165C1H221JA01D
Murata: GRM216R71H103KA01D
Murata: GRM21BR71H104KA01L
Murata: GRM21BR61A106KE19L
ATC: ATC600F150
Passive Plus: 1111N220GW501
Passive Plus: 1111N561GW501
Murata: GRM31B7U2E103JW31L
Murata: GRM32DR72E104KW01L
Panasonic: EEV-TG1J471M
EMC: SMT2010TALN
Vishay Dale: CRCW08059R10FKEA
Vishay Dale: CRCW08055R10FKEA
Vishay Dale:
CRCW2010510RFKEFHP
Susumu: RL7520WT-R010-F
BLS8G2731L-400P_LS-400P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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