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PDF BLU6H0410LS-600P Data sheet ( Hoja de datos )
| Número de pieza | BLU6H0410LS-600P | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
Table 1. Application information
Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal
f
IDq
PL(AV)
PL(M)
Gp
D IMD3
(MHz) (mA) (W)
(W) (dB) (%) (dBc)
pulsed, class-AB [1]
860 1.3 -
600 20 58 -
[1] Measured at = 10 %; tp = 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range
1 page  
NXP Semiconductors
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
24
Gp
(dB)
20
Gp
ηD
001aan761 60
ηD
(%)
40
16 20
BLU6H0410L(S)-600P
Power LDMOS transistor
24
Gp
(dB)
20
16
Gp
IMD3
001aan762 0
IMD3
(dBc)
-20
-40
12
0
0
100 200 300 400 500
PL(AV) (W)
Fig 2.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
12
0
-60
100 200 300 400 500
PL(AV) (W)
Fig 3.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
7.2 Impedance information
gate 1
Zi
gate 2
Fig 4. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(M) = 600 W.
f
MHz
Zi
ZL
300
0.617 j1.715
4.989 + j1.365
325
0.635 j1.355
4.867 + j1.424
350
0.655 j1.026
4.741 + j1.472
375
0.677 j0.721
4.614 + j1.511
BLU6H0410L-600P_6H0410LS-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1 D
U1
H1
12
w2 D
c
H U2
L
34
b
e
w3
E1 E
Q
Dimensions
0 5 10 mm
scale
Unit(1) A b c D D1 E E1 e F H H1 L Q U1 U2 w2 w3
max 4.7
mm nom
min 4.2
11.81 0.18 31.55 31.52 9.5
11.56 0.10 30.94 30.96 9.3
9.53 1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.25
9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.54
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
0.25
0.01
sot539b_po
Outline
version
References
IEC
JEDEC
JEITA
SOT539B
European
projection
Issue date
12-05-02
13-05-24
Fig 9. Package outline SOT539B
BLU6H0410L-600P_6H0410LS-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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