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PDF JANSR2N7489T3 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7489T3 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 93822B
IRHY57230CMSE
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
JANSR2N7489T3
200V, N-CHANNEL
REF:MIL-PRF-19500/705
Product Summary
5 TECHNOLOGY
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
12
7.6 A
48
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
60
12
7.5
5.4
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
06/10/04
1 page  
Pre-Irradiation
IRHY57230CMSE, JANSR2N7489T3
2000
1600
1200
800
400
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 12A
15
VDS = 160V
VDS = 100V
VDS = 40V
10
5
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.3
VGS = 0 V
0.6 0.9 1.2
VSD ,Source-to-Drain Voltage (V)
1.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED BY
RDS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
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| PDF Descargar | [ Datasheet JANSR2N7489T3.PDF ] | |
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