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Número de pieza | IRHYB597034CM | |
Descripción | RADIATION HARDENED POWER MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597034CM
60V, P-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYB597034CM 100K Rads (Si)
IRHYB593034CM 300K Rads (Si)
RDS(on)
0.087Ω
0.087Ω
ID
-20A
-20A
Low-Ohmic
TO-257AA (Tab-less)
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20
-13 A
-80
75 W
0.6 W/°C
±20 V
134 mJ
-20 A
7.5 mJ
-4.9
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
3.7 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
05/17/05
1 page Pre-Irradiation
IRHYB597034CM
2500
2000
1500
1000
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500
0
1
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -20A
16
12
VDS= -48V
VDS= -30V
VDS= -12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0
VGS = 0V
12345
-VSD , Source-to-Drain Voltage (V)
6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHYB597034CM.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHYB597034CM | RADIATION HARDENED POWER MOSFET | International Rectifier |
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