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PDF IRHYB597Z30CM Data sheet ( Hoja de datos )
| Número de pieza | IRHYB597Z30CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 95819
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597Z30CM
30V, P-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYB597Z30CM 100K Rads (Si)
IRHYB593Z30CM 300K Rads (Si)
RDS(on)
0.048Ω
0.048Ω
ID
-20A*
-20A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
TO-257AA Tabless
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20*
-18 A
-80
75 W
0.6 W/°C
±20 V
166 mJ
-20 A
7.5 mJ
-1.1
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
05/10/04
1 page  
Pre-Irradiation
IRHYB597Z30CM
3000
2400
1800
1200
VCGissS
=
=
0V,
Cgs
+
f = 1MHz
Cgd , Cds
SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
Coss
600
0
1
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -20A
16
VDS =-24V
VDS =-15V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
012345
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHYB597Z30CM.PDF ] | |
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