|
|
PDF IRHYS597Z30CM Data sheet ( Hoja de datos )
| Número de pieza | IRHYS597Z30CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHYS597Z30CM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PD-96899A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597Z30CM
JANSR2N7519T3
30V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Part Number
Radiation Level
IRHYS597Z30CM 100K Rads (Si)
IRHYS593Z30CM 300K Rads (Si)
RDS(on)
0.072Ω
0.072Ω
ID QPL Part Number
-20A* JANSR2N7519T3
-20A* JANSF2N7519T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
Low-Ohmic
TO-257AA
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-20*
-18
-80
75
0.6
±20
200
-20
7.5
-1.84
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in./1.6mm from case for 10s)
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
02/23/15
1 page  
Pre-Irradiation
IRHYS597Z30CM, JANSR2N7519T3
3000
2500
2000
1500
1000
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500
0
1
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -20A
16
VDS= -24V
VDS= -15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0
VGS = 0V
12345
-VSD , Source-to-Drain Voltage (V)
6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
DC
-VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHYS597Z30CM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHYS597Z30CM | RADIATION HARDENED POWER MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |