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PDF IRHYS67234CM Data sheet ( Hoja de datos )
| Número de pieza | IRHYS67234CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRHYS67234CM (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD-97193A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
2N7594T3
IRHYS67234CM
250V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67234CM 100K Rads (Si)
IRHYS63234CM 300K Rads (Si)
RDS(on)
0.22Ω
0.22Ω
ID
12A
12A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
12
7.6
48
75
0.6
±20
80
12
7.5
5.2
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/15/10
1 page  
Pre-Irradiation
IRHYS67234CM, 2N7594T3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4
ID = 12A
TJ = 150°C
TJ = 25°C
8 12 16 20 24
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ = 150°C
TJ = 25°C
VGS = 12V
10 20 30 40
ID, Drain Current (A)
50
Fig 6. Typical On-Resistance Vs
Drain Current
320
ID = 1.0mA
310
300
290
280
270
260
250
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
ID = 50µA
ID = 250µA
2.0 ID = 1.0mA
1.5 ID = 150mA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHYS67234CM.PDF ] | |
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