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PDF IRLF120 Data sheet ( Hoja de datos )
| Número de pieza | IRLF120 | |
| Descripción | N-CHANNEL TRANSISTORS | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRLF120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD-90639C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS
IRLF120
100V
RDS(on)
0.35Ω
ID
5.3A
IRLF120
100V, N-CHANNEL
The Logic Level ‘L’ series of power MOSFETs are designed
to be operated with level logic gate-to-source voltage of 5V.
In addition to the well established characterstics of
HEXFETs®, they have the added advantage of providing
low drive requirements to interface power loads to logic level
IC’s and microprocessors.
TO-39
Fields of applications include: high speed power applications
such as switching regulators, switching converters, motor
drivers, solenoid and relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low
gatedrive voltage.
The HEXFET technology is the key to International Rectifier’s
advanced line of logic level power MOSFET transistors. The
efficient geometry and unique processing of the HEXFET
achieve very low on-state resistance combined with high
transconductance and great device ruggedness.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Low Drive Requirements
n Execellent Temperature Stability
n Fast Switching Speeds
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
.Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
5.3
3.4
21
20
0.16
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±10
120
5.3
2.0
5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
09/04/14
1 page  
Fig9. MaximumDrainCurrentVs.
CaseTemperature
IRLF120
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRLF120.PDF ] | |
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