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PDF IRLF230 Data sheet ( Hoja de datos )
| Número de pieza | IRLF230 | |
| Descripción | N-CHANNEL TRANSISTORS | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Provisional Data Sheet No. PD-9.1614
HEXFET® TRANSISTOR
IRLF230
N-CHANNEL
200Volt, 0.40 Ω, HEXFET
The Logic Level ‘L’ series of power MOSFETs are
designed to be operated with level logic gate-to-
source voltage of 5V. In addition to the well es-
tablished characteristics of HEXFETs, they have
the added advantage of providing low drive re-
quirements to interface power loads to logic level
IC’s and microprocessors.
Fields of application include: high speed power
applications such as switching regulators, switch-
ing converters, motor drivers, solenoid and re-
lay drivers.
The HEXFET technology is the key to International
Rectifier’s advance line of logic level power
MOSFET transistors. The efficient geometry and
unique processing of the HEXFET achieve very
low on-state resistance combine with high
transconductance.
Product Summary
Part Number
BVDSS
IRLF230
200V
RDS(on)
0.40Ω
ID
5.2A
Features:
n Dynamic dv/dt Rating
n Logic Level Gate Drive
n RDS(on) Specific at VGS = 4V & 5V
n 150°C Operating Temperature
n Fast Switching
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRLF230
5.2
3.3
20
25
0.20
±10
4.2
-55 to 150
Units
A
W
W/K
V
V/ns
oC
300(0.063 in.(1.6mm) from case for 10s)
0.98 (typical)
g
4/7/97
1 page  
IRLF230
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
5 Page | ||
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| PDF Descargar | [ Datasheet IRLF230.PDF ] | |
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