|
|
PDF IRLR8729PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRLR8729PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRLR8729PBF-1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC = 25°C)
30 V
8.9 mΩ
10 nC
f58 A
IRLR8729PbF-1
HEXFET® Power MOSFET
DD
G
S
S
G
D-Pak
IRLR8729PbF-1
Features
Industry-standard pinout D-Pak and I-Pak
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRLR8729PbF-1
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Tape and Reel Left
3000
Orderable Part Number
IRLR8729TRPbF-1
IRLR8729TRLPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
30
± 20
58f
41f
260
55
27
0.37
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
2.73
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 29, 2014
1 page  
IRLR8729PbF-1
60
Limited By Package
50
40
2.5
2.0
30 1.5 ID = 25μA
ID = 50μA
20 ID = 100μA
1.0
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
175
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
C
i=
Ci
=τi /Rτ i/iRi
R2R 2
τ2 τ2
Ri (°C/W)
τCτC 1.251
1.481
τi (sec)
0.000513
0.004337
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 29, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLR8729PBF-1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRLR8729PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |