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Número de pieza | MGA-425P8 | |
Descripción | PHEMT Power Amplifier | |
Fabricantes | AVAGO | |
Logotipo | ||
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No Preview Available ! MGA-425P8
GaAs Enchancement-mode PHEMT
Power Amplifier in 2x2 mm2 LPCC Package
Data Sheet
Description
Avago Technologies’s MGA-425P8 power amplifier is designed
for wireless application in the 2–10 GHz frequency range. The
PA has a high power efficiency (PAE) achieved through the
use of Avago Technologies’s proprietary GaAs Enhancement-
mode pHEMT process.
MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8‑lead
leadless-plastic-chip-carrier (LPCC) package. The compact foot-
print, low profile couple with the excellent thermal efficiency
of the LPCC package makes the MGA‑425P8 an ideal choice as
power amplifier that saves board space.
On-chip bias circuitry allows operation from a single +3.3V
power supply. The output of the amplifier is near to 50Ω (be-
low 2:1VSWR) around 4.9–5.8 GHz.This makes MGA-425P8 an
ideal choice as power amplifier for broadband IEEE 802.11a
system as well as other high performance wireless application
in the 2–10 GHz frequency range.
One external resistor (RBias) is used to set the bias current of
the device over a wide range.
This allows the designer to use the same part in several circuit
positions and tailor the output power/linearity performance,
and current consumption, to suit each position.
Pin Connections and Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin)
Pin 3 (NC)
2YX
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 4 (NC)
Top View
Pin 5 (RBias)
Note:
Package marking provides orientation and identification
“2Y” = Device Code
“X” = Data code indicates the month of manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
GND
Pin 8 (NC)
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Bottom View
Note:
Use Die Attach Padded for electrical grounding and thermal dissipa-
tion
Features
• Near 50Ω broadband output match
• Single +3.3V supply
• High Gain & OIP3
• Miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
• Tape-and-Reel packaging
option available
Specifications @ 5.25 GHz, 3.3V, 58 mA (typ)
• 13.3 dBm Linear Pout @ 5% EVM
• 10.3% PAE @ +13.3 dBm Pout
• 12 dBm Linear Pout @ 3% EVM
• 7.6% PAE @ + 12 dBm Pout
• 47% PAE @ P1dB
• 20.3 dBm P1dB
• 32.9 dBm OIP3
• 16 dB Gain
• 1.7 dB NF
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Simplified Schematic
Rbias
Vbias
RFin
5
2
I bias
Bias
Vd
Id= Ids + Ibias
I ds
7
RFout, VD
1, 3, 4, 6, 8
(NC)
1 page MGA-425P8 Typical Performance Curves, Vds = 3.3V (at 25°C unless specified otherwise)
40
35
30
25
20
15
10
0 20 40 60 80
IDS (mA)
Figure 12. OIP3 vs. Ids at 5.25 GHz.
100
24
22
20
18
16
14
12
10
0 20 40 60 80
IDS (mA)
Figure 13. P1dB vs. Ids at 5.25 GHz.
100
20
18
16
14
12
10
8
6
0 20 40 60 80
IDS (mA)
Figure 14. GAIN vs. Ids at 5.25 GHz.
100
1.8
1.6
1.4
1.2
1
0.8 Vd=4V
Vd=3.3V
0.6
0.4
20
40 60
IDS (mA)
80
Figure 15. FMIN vs. Ids at 5.25 GHz.
100
12
10
8
6
4
2
0
0 20 40 60 80 100
IDS (mA)
Figure 16. RBias vs. Ids (Vds=3.3V).
120
5 Page MGA-425P8 Typical Scattering Parameters (at 25°C, VDS = 4V, IDS= 60 mA)
Freq.
GHz Mag.
S11 Ang.
dB
MS2a1 g. Ang.
dB
MS1a2 g. Ang.
0.1 0.797 -16.4
27.38 23.399 171
-33.98 0.02
79.2
0.5 0.793 -65.7
25.70 19.285 144.4
-32.40 0.024 58
0.9 0.809 -100.8 23.80 15.495 124.6 -29.12 0.035 41.9
1
0.81 -107.5
23.31 14.637 120.7
-28.64 0.037 38.7
1.5 0.826 -133.2 21.00 11.22 104.6 -27.33 0.043 26.7
1.9 0.83 -147
19.39 9.32
95
-26.94 0.045 19.6
2
0.836 -150.5
18.98 8.891 92.4
-26.74 0.046 18.4
2.4 0.839 -160.4 17.56 7.551 84.7
-26.56 0.047 13.5
3
0.844 -171.8
15.74 6.125 74.9
-26.38 0.048 8
3.5 0.847 -179.5 14.47 5.288 67.7
-26.20 0.049 4.3
3.9 0.845 175.4
13.49 4.726 61.9
-26.20 0.049 1
4
0.856 174.2
13.15 4.547 62.4
-26.20 0.049 2.3
4.5 0.854 168.1
12.29 4.116 55.4
-26.20 0.049 -1
5
0.856 162.7
11.42 3.726 49.9
-26.02 0.05
-3.3
5.1 0.856 161.6
11.28 3.664 48.6
-26.02 0.05
-3.9
5.2 0.856 160.6
11.12 3.598 47.4
-26.02 0.05
-4.5
5.3 0.856 159.6
10.96 3.533 46.2
-25.85 0.051 -5
5.4 0.856 158.5
10.81 3.47
45
-25.85 0.051 -5.6
5.5 0.855 157.5
10.65 3.409 43.8
-25.85 0.051 -6.2
5.6 0.855 156.5
10.51 3.352 42.5
-25.85 0.051 -6.9
5.7 0.857 155.5
10.35 3.291 41.3
-25.85 0.051 -7.5
5.8 0.857 154.5
10.19 3.231 40
-25.85 0.051 -8.3
6
0.861 153.4
9.75 3.072 37.5
-26.02 0.05
-9.4
7
0.87 143.3
8.42 2.635 27
-26.02 0.05
-13.4
8
0.862 133.3
7.25 2.305 15.8
-25.35 0.054 -17.9
9
0.869 122.3
6.36 2.079 5.1
-25.85 0.051 -24.1
10 0.873 111.8
5.38 1.858 -7.7
-25.19 0.055 -29.8
11 0.883 101.5
4.13 1.608 -18.8
-26.02 0.05
-34.2
12 0.897 91.8
3.23 1.451 -29.8
-25.68 0.052 -40.7
13 0.911 83.3
2.18 1.285 -41.4
-26.02 0.05
-45.9
14 0.914 75.5
1.01 1.123 -52.2
-26.20 0.049 -52.4
15 0.92 68.6
-0.10 0.989 -61.5
-26.94 0.045 -56
16 0.906 60.2
-1.13 0.878 -71.3
-26.94 0.045 -61.6
17 0.893 52.4
-2.17 0.779 -80.5
-26.94 0.045 -65.5
18 0.904 44.3
-3.30 0.684 -90.4
-28.18 0.039 -64.6
MagS. 22
0.66
0.578
0.463
0.437
0.331
0.266
0.254
0.215
0.177
0.16
0.16
0.142
0.144
0.139
0.138
0.138
0.141
0.142
0.141
0.142
0.145
0.147
0.16
0.167
0.16
0.174
0.204
0.228
0.284
0.341
0.392
0.433
0.469
0.502
0.533
MSG/MAG
Ang.
-7.8
-31.2
-49.1
-52.8
-68.1
-76.9
-80.9
-89.5
-102.1
-109.9
-117.9
-126.1
-128.7
-134.7
-135.2
-135.4
-136.1
-137.7
-138.7
-138.9
-139.7
-141
-143.5
-158.6
-172.5
164.9
139.2
119.6
113
105.1
99.7
95.9
91
84.9
75.3
35.91
29.05
26.46
25.97
24.17
23.16
22.86
22.06
21.06
20.33
19.84
19.68
19.24
18.72
18.65
18.57
18.41
18.33
18.25
18.18
18.10
18.02
17.88
17.22
16.30
13.27
11.66
11.72
11.59
10.70
9.93
8.07
6.48
5.78
13.27
Typical
Freq
Noise Parameters,
F Γmin opt
VDS
=
4V, IDS
Γopt
=
60
mA
Rn/50
GHz dB
Mag.
Ang.
0.9
0.86 0.1
-133.6
0.06
1.5
0.94
0.23
-175.5
0.06
1.9 1
0.26
-178.3
0.06
2
1.03
0.27
-179.6
0.06
2.4
1.08 0.3
178.7
0.06
3
1.17
0.36
-178.1
0.06
3.5
1.25 0.4
-173.8
0.06
3.9
1.3
0.43
-171.7
0.06
4.5 1.39 0.47 -167 0.06
5
1.47
0.48
-164.8
0.06
5.2 1.5 0.49 -163 0.06
5.5
1.53 0.5
-160.2
0.07
5.8
1.6
0.51
-158.6
0.07
6
1.62
0.53
-157.1
0.07
7
1.76
0.54
-149.2
0.1
8
1.93
0.53
-139.8
0.16
9
2.08
0.55
-126.4
0.28
10
2.22
0.61
-115.6
0.37
NF @
50 dB
0.83
1.01
1.12
1.15
1.27
1.41
1.59
1.7
1.9
2.08
2.1
2.18
2.27
2.33
2.63
2.94
3.25
3.61
40
30
MSG
20
10 S21
0
MAG
-10
0 5 10 15
FREQUENCY (GHz)
Figure 22. MSG/MAG & |S21|2 vs.
Frequency at 4V, 60 mA.
20
Note:
1. S Parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead.
The output reference plane is at the end of the drain lead.
11
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet MGA-425P8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGA-425P8 | GaAs Enchancement-mode PHEMT Power Amplifier | Agilent |
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