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PDF MGA-43003 Data sheet ( Hoja de datos )

Número de pieza MGA-43003
Descripción High Linearity (1.805 - 1.88)GHz Power Amplifier Module
Fabricantes AVAGO 
Logotipo AVAGO Logotipo



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MGA-43003
High Linearity (1.805 – 1.88) GHz Power Amplifier Module
Data Sheet
Description
Avago Technologies’ MGA-43003 is a fully matched power
amplifier for use in the (1.805-1.88) GHz band. High linear
output power at 5V is achieved through the use of Avago
Technologies’ proprietary 0.25um GaAs Enhancement-
mode pHEMT process. MGA-43003 is housed in a miniature
5.0mm x 5.0mm molded-chip-on-board (MCOB) module
package. A detector is also included on-chip. The compact
footprint coupled with high gain, high linearity and good
efficiency makes the MGA-43003 an ideal choice as a
power amplifier for small cell BTS PA applications.
Applications
Final stage high linearity amplifier for Picocell and
Enterprise Femtocell PA targeted for small cell BTS
downlink applications.
Component Image
AVAGO
43003
YYWW
XXXX
5.0 x 5.0 x 0.9 mm Package Outline
Notes:
Package marking provides orientation
and identification
”43003” = Device part number
”YYWW” = Year and work week
”XXXX” = Assembly lot number
TOP VIEW
Pin Configuration
Features
High linearity performance : Typ -48dBc ACLR1 [1] at
27.0dBm linear output power (biased with 5V supply)
High Gain : 41.7dB
Good efficiency
Fully matched
Built-in detector
GaAs E-pHEMT Technology [2]
Low cost small package size: (5.0 x 5.0 x 0.9) mm
Specifications
1.842GHz; 5.0V, Idq=360mA (typ), LTE DL E-TM1.1, 20MHz
100RB, downlink signal
PAE : 14%
27.0dBm linear Pout @ ACLR1 =-48dBc [1]
41.7dB Gain
Detector range : 20dB
Note:
1. LTE DL E-TM1.1, 20MHz 100RB, downlink signal
2. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Functional Block Diagram
Vdd1 Vdd2
Vdd3
Gnd 1
Gnd 2
NC 3
RFin 4
NC 5
Gnd 6
NC 7
(5.0 x 5.0 x 0.9) mm
21 Gnd
20 Gnd
19 RFout
18 RFout
17 RFout
16 Gnd
15 Gnd
RFin
1st Stage 2nd Stage 3rd Stage
RFout
Biasing Circuit
Vc1 Vc2 Vc3 VddBias Vdet
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.

1 page




MGA-43003 pdf
MGA-43003 typical over-temperature performance at Vc1=1.8V, Vc2=1.6V, Vc3=2.0V unless otherwise stated
-32
-36
ACLR1_85°C
PAE_85°C
ACLR1_25°C
PAE_25°C
ACLR1_-40°C
PAE_-40°C
-40
24
21
18
-44 15
-48 12
-52 9
-56 6
-60 3
-64 0
18 19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
Figure 11. Over-temperature ACLR1, PAE vs Pout @ 1.87GHz
Vdd=VddBias=5.0V operating voltage
-32
-36
ACLR1_85°C ACLR1_25°C ACLR1_-40°C
PAE_85°C
PAE_25°C
PAE_-40°C
-40
24
21
18
-44 15
-48 12
-52 9
-56 6
-60 3
-64 0
18 19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
Figure 12. Over-temperature ACLR1, PAE vs Pout @ 1.87GHz
Vdd=VddBias=5.5V operating voltage
1800
1700
1600
1500
1400
Idd_Total_85°C
Idd_Total_25°C
Idd_Total_-40°C
1300
1200
1100
1000
900
800
700
600
500
400
300
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Pout/dBm
Figure 13. Over-temperature Idd_total vs Pout @ 1.842GHz
Vdd=VddBias=5.0V operating voltage
5

5 Page





MGA-43003 arduino
S-Parameter [5] (Vdd=VddBias=5.5V, Vc1=1.8V, Vc2=1.6V, Vc3=2.0V), T=25 °C, 50ohm matched) Cont.
Freq S11 S11 S21 S21 S12 S12 S22
(GHz) (dB)
(ang) (dB)
(ang) (dB)
(ang) (dB)
4.3
-6.73
145.09
-6.23
106.85
-65.05
33.32
-0.20
4.4
-6.90
142.21
-3.98
68.76
-67.23
36.21
-0.21
4.5
-7.04
142.33
-7.36
47.30
-66.38
35.96
-0.19
4.6
-6.90
142.38
-11.36
38.21
-62.34
14.90
-0.20
4.7
-6.69
140.65
-13.54
46.44
-63.24
37.89
-0.21
4.8
-6.74
139.57
-14.54
36.92
-62.19
56.23
-0.23
4.9
-6.61
139.68
-17.48
27.16
-62.79
42.79
-0.24
5.0
-6.43
138.98
-21.83
24.15
-59.87
29.35
-0.27
5.1
-6.19
136.43
-27.31
42.39
-62.62
50.95
-0.30
5.2
-5.48
132.32
-28.76
84.21
-58.57
29.40
-0.32
5.3
-4.93
124.24
-29.21
135.36
-59.18
26.78
-0.34
5.4
-5.02
113.88
-16.47
-2.90
-58.22
12.27
-0.37
5.5
-5.65
105.57
-5.22
139.20
-57.13
-0.63
-0.51
5.6
-6.57
98.37
-2.09
60.18
-61.53
-44.07
-0.56
5.7
-7.62
95.50
-5.70
15.51
-65.35
1.13
-0.43
5.8
-8.35
94.38
-8.36
-7.49
-62.34
-29.35
-0.41
5.9
-8.88
93.72
-9.82
-26.15
-69.08
-30.82
-0.41
6.0
-9.22
93.31
-9.99
-49.72
-64.77
-19.58
-0.44
7.0
-9.40
88.81
-44.00
-19.50
-61.85
3.64
-0.31
8.0
-7.02
92.52
-38.56
16.91
-60.62
7.26
-0.25
9.0
-5.40
94.06
-38.50
-23.70
-59.21
-29.55
-0.33
10.0
-5.40
82.91
-38.71
-58.44
-57.47
-40.69
-0.73
11.0
-5.98
52.21
-40.79
-103.76
-59.42
-78.22
-0.80
12.0
-4.67
20.54
-44.75
-140.47
-60.73
-94.41
-0.52
13.0
-2.68
16.08
-47.88
-152.48
-61.73
-85.07
-0.31
14.0
-1.80
23.47
-45.63
172.49
-61.57
-34.42
-0.42
15.0
-2.31
10.32
-47.97
100.28
-51.49
-25.39
-0.87
16.0
-2.97
-47.89
-47.56
12.07
-47.76
-67.84
-0.75
17.0
-1.89
-107.22
-43.40
-46.37
-46.31
-83.79
-0.55
18.0
-3.98
-7.49
-41.22
-93.11
-43.24
-120.74
-0.17
19.0
-3.48
35.04
-41.01
-7.28
-43.70
-166.91
-0.24
20.0
-1.89
14.22
-43.65
-143.65
-44.08
-144.54
-0.49
Notes:
5. S-parameter is measured with deembedded reference plane at DUT RFin and RFout pins.
S22
(ang)
132.86
131.52
129.86
128.24
126.50
124.74
122.95
120.51
117.75
115.82
113.92
111.82
109.71
109.37
107.64
105.44
103.41
101.23
81.41
58.37
35.08
10.52
-12.50
-30.11
-44.91
-62.03
-85.45
-103.23
-108.08
-107.59
-115.31
-129.83
11

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