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NXP Semiconductors - Schottky barrier diode

Numéro de référence 1PS66SB17
Description Schottky barrier diode
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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1PS66SB17 fiche technique
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Rev. 06 — 4 April 2005
Product data sheet
1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
Table 1: Product overview
Type number
Package
Philips
1PS66SB17
SOT666
1PS76SB17
SOD323
1PS79SB17
SOD523
JEITA
-
SC-76
SC-79
Configuration
triple isolated diode
single diode
single diode
1.2 Features
s Very low diode capacitance
s Very low forward voltage
s Very small SMD plastic packages
1.3 Applications
s Digital applications:
x Ultra high-speed switching
x Clamping circuits.
s RF applications:
x Diode ring mixer
x RF detector
x RF voltage doubler
1.4 Quick reference data
Table 2:
Symbol
IF
VR
Cd
Quick reference data
Parameter
Conditions
continuous forward current
continuous reverse voltage
diode capacitance
Min Typ Max Unit
- - 30 mA
- - 4V
-
0.8 1
pF

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