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PDF K2140 Data sheet ( Hoja de datos )
| Número de pieza | K2140 | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES
• Low On-state Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 7.0 A
Single Avalanche Energy**
EAS 16.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
(0.5(0R.)8R)
0.5 ± 0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
Document No. TC-2513
(O. D. No. TC-8072)
Date Published February 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS = 10 V
Pulsed
2.0
ID = 3.5 A
1.0
0
–50
10 000
1 000
0 50 100
Tch - Channel Temperature - ˚C
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
10
Coss
Crss
1
0.1 1.0 10 100 1 000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
800 16
ID = ID (DC)
14
600
VDD = 450 V
VGS 12
300 V
150 V
10
400 8
6
200 4
VDS 2
0
0 4 8 12 16 20 24 28 32
Qg - Gate Charge - nC
2SK2140, 2SK2140-Z
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
10 V
VGS = 0 V
1.0
0.1
0 0.5 1.0 1.5 2.0
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td (on)
td(off)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0
10
ID - Drain Current - A
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
800
di/dt = 50 A/µs
VGS = 10 V
600
400
200
0
0.1 1.0 10 100
ID - Drain Current - A
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2140.PDF ] | |
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