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Datasheet BF5020W-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BF5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF502 | NPN SILICON RF TRANSISTOR Siemens Semiconductor Group transistor | | |
| 2 | BF5020 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f  Infineon mosfet | | |
| 3 | BF5020R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f Infineon mosfet | | |
| 4 | BF5020W | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f Infineon mosfet | | |
| 5 | BF503 | NPN SILICON RF TRANSISTOR Siemens Semiconductor Group transistor | | |
| 6 | BF5030 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and VHF-tuners with AGC function
• Supporting 5 V operations and power saving 3 V operations
• Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo Infineon mosfet | | |
| 7 | BF5030R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and VHF-tuners with AGC function
• Supporting 5 V operations and power saving 3 V operations
• Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo Infineon mosfet | |
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