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RQ3E100BN fiches techniques PDF

ROHM Semiconductor - Nch 30V 10A Middle Power MOSFET

Numéro de référence RQ3E100BN
Description Nch 30V 10A Middle Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RQ3E100BN fiche technique
RQ3E100BN
  Nch 30V 10A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
10.4mΩ
±10A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E100BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±10
±40
±20
2
150
-55 to +150
V
A
A
V
W
                                              
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141001 - Rev.001    

PagesPages 12
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