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PDF CQ202-4B-2 Data sheet ( Hoja de datos )
| Número de pieza | CQ202-4B-2 | |
| Descripción | 4.0 AMP TRIAC | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CQ202-4B-2
CQ202-4D-2
CQ202-4M-2
CQ202-4N-2
4.0 AMP TRIAC
200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4B-2
series type is an epoxy molded silicon triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CQ202
SYMBOL -4B-2
Peak Repetitive Off-State Voltage
VDRM
200
RMS On-State Current (TC=80°C)
IT(RMS)
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
Peak Non-Repetitive Surge Current (t=10ms) ITSM
I2t Value for Fusing (t=10ms)
I2t
Peak Gate Power (tp=10μs)
Average Gate Power Dissipation
Peak Gate Current (tp=10μs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGM
Tstg
TJ
ΘJA
ΘJC
CQ202
-4D-2
400
CQ202
-4M-2
600
4.0
40
35
6.0
3.0
0.2
1.2
-40 to +150
-40 to +125
60
7.5
CQ202
-4N-2
800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1.0KΩ
IDRM
Rated VDRM, RGK=1.0KΩ, TC=125°C
IGT VD=12V, QUAD I, II, III
IGT VD=12V, QUAD IV
IH RGK=1.0KΩ
VGT
VD=12V, QUAD I, II, III
VGT
VD=12V, QUAD IV
VTM
ITM=6.0A, tp=380μs
dv/dt
VD=⅔ VDRM, TC=125°C
5.0
TYP
6.6
35
5.2
1.1
2.0
1.25
MAX
10
200
20
50
25
1.5
2.5
1.6
UNITS
V
A
A
A
A2s
W
W
A
°C
°C
°C/W
°C/W
UNITS
μA
μA
mA
mA
mA
V
V
V
V/μs
R2 (23-April 2012)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CQ202-4B-2.PDF ] | |
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