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Infineon - Silicon Tuning Diode

Numéro de référence BBY58-06W
Description Silicon Tuning Diode
Fabricant Infineon 
Logo Infineon 





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BBY58-06W fiche technique
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BBY58...
BBY58-02L/V
BBY58-02W
BBY58-03W

BBY58-05W
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BBY58-06W
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Type
BBY58-02L
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
Configuration
single, leadless
single
single
single
common cathode
common anode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH)
0.4
0.6
0.6
0.6
1.4
1.4
Marking
88
8
88
8 yel.
B5s
B6s
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2007-09-19

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