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Numéro de référence | KTX102E | ||
Description | EPITAXIAL PLANAR NPN/PNP TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
KTX102E
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 Pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
MARKING
654
Q1 Q2
D4Type Name
Lot No.
12 3
123
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Q1 EMITTER
2. Q1 BASE
3. Q2 BASE
4. Q2 COLLECTOR
5. Q2 EMITTER
6. Q1 COLLECTOR
TES6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SYMBOL
VCBO
VCEO
VEBO
IC
IB
RATING
-50
-50
-5
-150
-30
UNIT
V
V
V
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2008. 9. 23
Revision No : 1
SYMBOL
VCBO
VCEO
VEBO
IC
IB
SYMBOL
PC *
Tj
Tstg
RATING
60
50
5
150
30
RATING
200
150
-55 150
UNIT
V
V
V
UNIT
1/5
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Pages | Pages 5 | ||
Télécharger | [ KTX102E ] |
No | Description détaillée | Fabricant |
KTX102E | EPITAXIAL PLANAR NPN/PNP TRANSISTOR | KEC |
KTX102U | EPITAXIAL PLANAR NPN/PNP TRANSISTOR (GENERAL PURPOSE) | KEC(Korea Electronics) |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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